Interface properties of metal-oxide-semiconductor structures on n-type 6H and 4H-SiC
- 期刊名称Journal of Applied Physics
- 作者Friedrichs, P.; Burte, E. P.; Schörner, R.
- 卷第79卷
- 期第10期
- 印刷ISSN0021-8979
- 文件大小369.28KB
- 发表时间1996
- DOI10.1063/1.362389
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