海量图书期刊资源,随时随地畅享阅读乐趣
Representation for the Impurity Problem in Semiconductors"Brews, J. R. · Physical Review B · 1972
An improved high-frequency MOS capacitance formulaBrews, J. R. · Journal of Applied Physics · 1974
Symmetry Considerations and the Vanadium Dioxide Phase TransitionBrews, J. R. · Physical Review B · 1970
Domain switching and spatial dependence of permittivity in ferroelectric thin filmsF. K. Chai; J. R. Brews; R. D. Schrimpf; D. P. Birnie · 1997
Energy Band Changes in Perovskites Due to Lattice PolarizationBrews, J. R. · Physical Review Letters · 1967
Correcting interface-state errors in MOS doping profile determinationsBrews, J. R. · Journal of Applied Physics · 1973
Surface Potential Fluctuations Generated by Interface Charge Inhomogeneities in MOS DevicesBrews, J. R. · Journal of Applied Physics · 1972
Electro-rheologyBlock, H; Kelly, J P · Journal of Physics D: Applied Physics · 1988
Semiconductor nanowiresLu, Wei; Lieber, Charles M · Journal of Physics D: Applied Physics · 2006
Nanoassembled model catalystsHeiz, Ueli; Schneider, Wolf-Dieter · Journal of Physics D: Applied Physics · 2000
Mechanisms for exchange biasStamps, R L · Journal of Physics D: Applied Physics · 2000
Thermal plasma waste treatmentHeberlein, Joachim; Murphy, Anthony B · Journal of Physics D: Applied Physics · 2008
Surface enhanced fluorescenceFort, Emmanuel; Grésillon, Samuel · Journal of Physics D: Applied Physics · 2008
Nanocomposite dielectrics—properties and implicationsNelson, J K; Hu, Y · Journal of Physics D: Applied Physics · 2005
Memristor-based neural networksThomas, Andy · Journal of Physics D: Applied Physics · 2013