Single event damage effects in cryogenic CMOS microelectronics
- 期刊名称IEEE Transactions on Nuclear Science
- 作者Pickel, J.C.
- 卷第43卷
- 期第3期
- 印刷ISSN0018-9499
- 文件大小572.40KB
- 发表时间1996-6
- DOI10.1109/23.510733
- 页码912-917
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