Band Tailings and Deep Defects in Semiconductors: Appendix A: General Derivation of Initial State Decay
- 期刊名称Defect and Diffusion Forum
- 作者Teate, A.A.; Halder, N.C.
- 卷第133卷
- 电子ISSN1662-9507
- 文件大小208.36KB
- 发表时间1996
- DOI10.4028/www.scientific.net/DDF.133.142
- 页码142-145
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