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Comparison of damage created by a chemical downstream etcher and plasma-immersion system in metal–oxide–semiconductor capacitors

Comparison of damage created by a chemical downstream etcher and plasma-immersion system in metal–oxide–semiconductor capacitors

T. Brożek
  • 作者T. Brożek
  • 文件大小475.57KB
  • 发表时间1996
  • DOI10.1116/1.588434
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