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Characterization of Highly Selective
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<i>S</i>
<i>i</i>
<i>O</i>
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/
<i>S</i>
<i>i</i>
<sub/>3</sub><i>N</i>
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Etching of High-Aspect-Ratio Holes

Characterization of Highly Selective S i O ₂ / S i ₃N ₄ Etching of High-Aspect-Ratio Holes

Hayashi, Hisataka; Kurihara, Kazuaki; Sekine, Makoto

期刊名称Japanese Journal of Applied Physics
作者Hayashi, Hisataka; Kurihara, Kazuaki; Sekine, Makoto
卷第35卷
印刷ISSN0021-4922
电子ISSN1347-4065
文件大小1149.31KB
发表时间1996-4-30
DOI10.1143/JJAP.35.2488
页码2488-2493

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