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Effect of deep level trapping of free carriers on the stabilization of current-voltage characteristics of high resistivity silicon detectors irradiated by high fluence of neutrons

Effect of deep level trapping of free carriers on the stabilization of current-voltage characteristics of high resistivity silicon detectors irradiated by high fluence of neutrons

V. Eremin; Z. Li

作者V. Eremin; Z. Li
卷第383卷
印刷ISSN0168-9002
文件大小777.45KB
发表时间1996
DOI10.1016/s0168-9002(96)00794-2
页码528-536

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