Low defect density amorphous silicon germanium alloy (1.5 eV) deposited at high growth rate under helium dilution in RF-PECVD method

• 作者Sukti Hazra; A.R. Middya; Swati Ray
• 卷第211卷
• 印刷ISSN0022-3093
• 文件大小549.29KB
• 发表时间1997
• DOI10.1016/s0022-3093(96)00631-x