Properties of InGaN quantum-well heterostructures grown on sapphire by metalorganic chemical vapor deposition
- 期刊名称Applied Physics Letters
- 作者Grudowski, P. A.; Eiting, C. J.; Park, J.; Shelton, B. S.; Lambert, D. J. H.; Dupuis, R. D.
- 卷第71卷
- 期第11期
- 印刷ISSN0003-6951
- 文件大小372.68KB
- 发表时间1997
- DOI10.1063/1.119959
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