Observation of resonant Raman lines during the photoluminescence of doped GaN
- 期刊名称Semiconductor Science and Technology
- 作者Dewsnip, D J; Andrianov, A V; Harrison, I; Lacklison, D E; Orton, J W; Morgan, J; Ren, G B; Cheng, T S; Hooper, S E; Foxon, C T
- 卷第12卷
- 期第1期
- 印刷ISSN0268-1242
- 电子ISSN1361-6641
- 文件大小89.88KB
- 发表时间1997-01-01
- DOI10.1088/0268-1242/12/1/011
- 页码55-58
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