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Low 1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with electrically abrupt emitter-base junction

Low 1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with electrically abrupt emitter-base junction

Jin-hi Shin; Joonwoo Lee; Yujin Chung; Byoung-uk Ihn; Bumman Kim
  • 作者Jin-hi Shin; Joonwoo Lee; Yujin Chung; Byoung-uk Ihn; Bumman Kim
  • 卷第18卷
  • 期第2期
  • 文件大小103.26KB
  • 发表时间1997
  • DOI10.1109/55.553044
  • 页码60-62
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