[IEEE SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Cambridge, MA, USA (8-10 Sept. 1997)] SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Modeling nonparabolicity effects in silicon inversion layers
- 作者Troger, C.; Kosina, H.; Selberherr, S.
- 文件大小332.08KB
- 发表时间1997
- DOI10.1109/sispad.1997.621403
- 页码323-326
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