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Low temperature deposition of SiN[sub x]:H using SiH[sub 4]–N[sub 2] or SiH[sub 4]–NH[sub 3] distributed electron cyclotron resonance microwave plasma

Low temperature deposition of SiN[sub x]:H using SiH[sub 4]–N[sub 2] or SiH[sub 4]–NH[sub 3] distributed electron cyclotron resonance microwave plasma

Delmotte, F.

期刊名称Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
作者Delmotte, F.
卷第15卷
期第6期
印刷ISSN0734-211X
文件大小489.00KB
发表时间1997-11
DOI10.1116/1.589579

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