Nanometer-scale selective-area GaAs growth on nitrogen-passivated surfaces using STM and MOMBE
- 作者Makoto Kasu; Toshiki Makimoto; Naoki Kobayashi
- 卷第173卷
- 印刷ISSN0022-0248
- 文件大小144.30KB
- 发表时间1997
- DOI10.1016/s0022-0248(96)01096-2
- 页码589-591
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