SiO2 valence band near the SiO2/Si(111) interface
- 作者Hiroshi Nohira; Takeo Hattori
- 印刷ISSN0169-4332
- 文件大小348.15KB
- 发表时间1997
- DOI10.1016/s0169-4332(97)80063-3
- 页码119-122
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