Effects of Ga adatom migration on formation of lateral p-n tunneling junctions on GaAs(N11)A patterned substrates
- 作者Hajime Ohnishi; Kazuhisa Fujita; Toshihide Watanabe
- 印刷ISSN0169-4332
- 文件大小519.57KB
- 发表时间1997
- DOI10.1016/s0169-4332(97)80125-0
- 页码459-464
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