In situ surface passivation of III–V semiconductors in MOVPE by amorphous As and P layers
- 作者K. Knorr; M. Pristovsek; U. Resch-Esser; N. Esser; M. Zorn; W. Richter
- 卷第170卷
- 印刷ISSN0022-0248
- 文件大小446.25KB
- 发表时间1997
- DOI10.1016/s0022-0248(96)00629-x
- 页码230-236
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