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Backscattering/channeling study of high-dose rare-earth implants into Si

Backscattering/channeling study of high-dose rare-earth implants into Si

A. Vantomme; U. Wahl; M.F. Wu; S. Hogg; H. Pattyn; G. Langouche; H. Bender

作者A. Vantomme; U. Wahl; M.F. Wu; S. Hogg; H. Pattyn; G. Langouche; H. Bender
印刷ISSN0168-583X
文件大小637.91KB
发表时间1998
DOI10.1016/s0168-583x(97)00719-2
页码471-477

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