Strain-compensated InGa(As)P-InAsP active regions for 1.3-μm wavelength lasers
- 作者Dries, J.C.; Gokhale, M.R.; Uenohara, H.; Forrest, S.R.
- 卷第10卷
- 期第1期
- 文件大小79.71KB
- 发表时间1998
- DOI10.1109/68.651096
- 页码42-44
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