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Defect-associated photoluminescence and rapid thermal annealing effect on SiO[sub 2] films grown in the plasma phase

Defect-associated photoluminescence and rapid thermal annealing effect on SiO[sub 2] films grown in the plasma phase

K. Kim
  • 作者K. Kim
  • 文件大小402.91KB
  • 发表时间1998
  • DOI10.1116/1.581339
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