[IEEE Compound Semiconductors 1997. IEEE Twenty-Fourth International Symposium on Compound Semiconductors - San Diego, CA, USA (8-11 Sept. 1997)] Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors - Growth of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs
- 作者Hong, M.; Ren, F.; Hobson, W.S.; Kuo, J.M.; Kwo, J.; Mannaerts, J.P.; Lothian, J.R.; Marcus, M.A.; Liu, C.T.; Sergent, A.M.; Lay, T.S.; Chen, Y.K.
- 文件大小380.91KB
- 发表时间1998
- DOI10.1109/iscs.1998.711645
- 页码319-324
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