Sub-micron fine structure of GaN by metalorganic vapor phase epitaxy (MOVPE) selective area growth (SAG) and buried structure by epitaxial lateral overgrowth (ELO)
- 期刊名称Journal of Crystal Growth
- 作者Matsushima, Hidetada; Yamaguchi, Masahito; Hiramatsu, Kazumasa; Sawaki, Nobuhiko
- 印刷ISSN0022-0248
- 文件大小191.72KB
- 发表时间1998-6
- DOI10.1016/s0022-0248(98)00175-4
- 页码78-82
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