MBE growth and characterization of magnesium-doped gallium nitride
- 期刊名称Semiconductor Science and Technology
- 作者Dewsnip, D J; Orton, J W; Lacklison, D E; Flannery, L; Andrianov, A V; Harrison, I; Hooper, S E; Cheng, T S; Foxon, C T; Novikov, S N; Ber, B Ya; Kudriavtsev, Yu A
- 卷第13卷
- 期第8期
- 印刷ISSN0268-1242
- 电子ISSN1361-6641
- 文件大小177.21KB
- 发表时间1998-08-01
- DOI10.1088/0268-1242/13/8/018
- 页码927-935
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