Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride
- 作者K. S. Seol; T. Futami; T. Watanabe; Y. Ohki; M. Takiyama
- 卷第85卷
- 期第9期
- 文件大小247.37KB
- 发表时间1999
- DOI10.1063/1.370188
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