Effect of stress induced anisotropy on SAL-biased MR head performance
- 期刊名称IEEE Transactions on Magnetics
- 作者Choe, G.; Wu, A.; Gocemen, F.; Johns, E.
- 卷第35卷
- 期第5期
- 印刷ISSN0018-9464
- 文件大小327.81KB
- 发表时间1999
- DOI10.1109/20.800892
- 页码2565-2567
[IRE 1969 International Electron Devices Meeting - ()] 1969 International Electron Devices Meeting - A multibeam CRTSay, D.L. · 1969
[IRE 1969 International Electron Devices Meeting - ()] 1969 International Electron Devices Meeting - Gate protection of MIS devicesLenzlinger, M. · 1969
[IRE 1969 International Electron Devices Meeting - ()] 1969 International Electron Devices Meeting - The MOS planox processMorandi, F. · 1969
[IRE 1969 International Electron Devices Meeting - ()] 1969 International Electron Devices Meeting - Gas discharge display panelNolan, J.F. · 1969
[IRE 1969 International Electron Devices Meeting - ()] 1969 International Electron Devices Meeting - High efficiency klystron amplifierLien, E.L. · 1969
[IRE 1969 International Electron Devices Meeting - ()] 1969 International Electron Devices Meeting - Thermal characteristics of high speed devicesJoy, R.C · 1969
[IRE 1969 International Electron Devices Meeting - ()] 1969 International Electron Devices Meeting - An ultrafast light gateDuguay, M.A.; Hansen, J.W. · 1969
[IRE 1969 International Electron Devices Meeting - ()] 1969 International Electron Devices Meeting - Neutron hardened transistorsSmith, D.M.; Hahn, L.A.; Bradshaw, P.D.; Hoffman, J.R. · 1969