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[IEEE 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition - San Francisco, CA, USA (15-17 Feb. 1999)] 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278) - A 130 mm/sup 2/ 256 Mb NAND flash with shallow trench isolation technology

[IEEE 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition - San Francisco, CA, USA (15-17 Feb. 1999)] 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278) - A 130 mm/sup 2/ 256 Mb NAND flash with shallow trench isolation technology

Imamiya, K.; Sugiura, Y.; Nakamura, H.; Himeno, T.; Takeuchi, K.; Ikehashi, T.; Kanda, K.; Hosono, K.; Shirota, R.; Aritome, S.; Shimizu, K.; Hatakeyama, K.; Sakui, K.
  • 作者Imamiya, K.; Sugiura, Y.; Nakamura, H.; Himeno, T.; Takeuchi, K.; Ikehashi, T.; Kanda, K.; Hosono, K.; Shirota, R.; Aritome, S.; Shimizu, K.; Hatakeyama, K.; Sakui, K.
  • 文件大小276.26KB
  • 发表时间1999
  • DOI10.1109/isscc.1999.759157
  • 页码112-113
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