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Surface micro-roughness and transport properties of Si delta-doped GaAs/In[sub x]Ga[sub 1−x]As/GaAs (0.1≤×≤0.25) quantum wells grown by molecular-beam epitaxy on GaAs (001) and GaAs (111)B

Surface micro-roughness and transport properties of Si delta-doped GaAs/In[sub x]Ga[sub 1−x]As/GaAs (0.1≤×≤0.25) quantum wells grown by molecular-beam epitaxy on GaAs (001) and GaAs (111)B

Zervos, M.; Elliott, M.; Westwood, D. I.

期刊名称Applied Physics Letters
作者Zervos, M.; Elliott, M.; Westwood, D. I.
卷第75卷
期第16期
印刷ISSN0003-6951
文件大小339.73KB
发表时间1999
DOI10.1063/1.125047

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