Metastable surface ordering in strain relaxed Si[sub 0.5]Ge[sub 0.5] epitaxial layers grown at high temperature
Reichert, H.; Moss, S. C.; Imperatori, P.; Evans-Lutterodt, K.
- 期刊名称Applied Physics Letters
- 作者Reichert, H.; Moss, S. C.; Imperatori, P.; Evans-Lutterodt, K.
- 卷第74卷
- 期第4期
- 印刷ISSN0003-6951
- 文件大小312.12KB
- 发表时间1999
- DOI10.1063/1.123177