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Asymmetrical heating behavior of doped Si channels in bulk silicon and in silicon-on-insulator under high current stress

Asymmetrical heating behavior of doped Si channels in bulk silicon and in silicon-on-insulator under high current stress

Liao, C. N.; Chen, C.; Huang, J. S.; Tu, K. N.

期刊名称Journal of Applied Physics
作者Liao, C. N.; Chen, C.; Huang, J. S.; Tu, K. N.
卷第86卷
期第12期
印刷ISSN0021-8979
文件大小837.28KB
发表时间1999
DOI10.1063/1.371769

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