GaN on Si Substrate with AlGaN/AlN Intermediate Layer
Ishikawa, Hiroyasu; Zhao, Guang-Yuan; Nakada, Naoyuki; Egawa, Takashi; Jimbo, Takashi; Umeno, Masayoshi
- 期刊名称Japanese Journal of Applied Physics
- 作者Ishikawa, Hiroyasu; Zhao, Guang-Yuan; Nakada, Naoyuki; Egawa, Takashi; Jimbo, Takashi; Umeno, Masayoshi
- 卷第38卷
- 印刷ISSN0021-4922
- 文件大小92.03KB
- 发表时间1999-5-1
- DOI10.1143/jjap.38.l492