[ESD Assoc Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 1999 - Orlando, FL, USA (28-30 Sept. 1999)] Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 1999 (IEEE Cat. No.99TH8396) - Design methodology of a robust ESD protection circuit for STI process 256 Mb NAND memory
- 作者Ikehashi, T.; Imamiya, K.; Sakui, K.
- 文件大小997.01KB
- 发表时间1999
- DOI10.1109/eosesd.1999.819065
- 页码225-234
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