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Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction

Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction

Victor Sonnenberg; João Antonio Martino

作者Victor Sonnenberg; João Antonio Martino
卷第43卷
期第12期
印刷ISSN0038-1101
文件大小221.06KB
发表时间1999
DOI10.1016/s0038-1101(99)00191-4
页码2191-2199

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