Resonant Tunneling Diodes in Si/CaF 2 Heterostructures Grown by Molecular Beam Epitaxy
- 期刊名称Japanese Journal of Applied Physics
- 作者Tsutsui, Masafumi; Watanabe, Masahiro; Asada, Masahiro
- 卷第38卷
- 印刷ISSN0021-4922
- 文件大小439.71KB
- 发表时间1999-8-15
- DOI10.1143/JJAP.38.L920
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