Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy
- 作者Kazumasa Hiramatsu; Hidetada Matsushima; Takumi Shibata; Yasutoshi Kawagachi; Nobuhiko Sawaki
- 卷第59卷
- 印刷ISSN0921-5107
- 文件大小1087.42KB
- 发表时间1999
- DOI10.1016/s0921-5107(98)00339-0
- 页码104-111