Ultra-Thin High Quality Silicon Nitride Gate Dielectrics Prepared by Catalytic Chemical Vapor Deposition at Low Temperatures
- 期刊名称MRS Proceedings
- 作者Sato, Hidekazu; Izumi, Akira; Matsumura, Hideki
- 卷第567卷
- 电子ISSN1946-4274
- 文件大小288.89KB
- 发表时间1999-1
- DOI10.1557/proc-567-155