TEM Study of Defects in Laterally Overgrown GaN Layers

• 期刊名称MRS Internet Journal of Nitride Semiconductor Research
• 作者Liliental-Weber, Z.; Benamara, M.; Swider, W.; Washburn, J.; Park, J.; Grudowski, P. A.; Eiting, C. J.; Dupuis, R. D.
• 卷第4卷
• 印刷ISSN1092-5783
• 电子ISSN1092-5783
• 文件大小348.65KB
• 发表时间1999
• DOI10.1557/s1092578300002891
• 页码459-464