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The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing

The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing

Wu, Y.; Lucovsky, G.; Lee, Y.-M.

作者Wu, Y.; Lucovsky, G.; Lee, Y.-M.
卷第47卷
期第7期
印刷ISSN0018-9383
电子ISSN1557-9646
文件大小177.31KB
发表时间2000
DOI10.1109/16.848278
页码1361-1369

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