Point defects in gamma-irradiated n-GaN

Emtsev, V V; Davydov, V Yu; Kozlovskii, V V; Lundin, V V; Poloskin, D S; Smirnov, A N; Shmidt, N M; Usikov, A S; Aderhold, J; Klausing, H; Mistele, D; Rotter, T; Stemmer, J; Semchinova, O; Graul, J

期刊名称Semiconductor Science and Technology
作者Emtsev, V V; Davydov, V Yu; Kozlovskii, V V; Lundin, V V; Poloskin, D S; Smirnov, A N; Shmidt, N M; Usikov, A S; Aderhold, J; Klausing, H; Mistele, D; Rotter, T; Stemmer, J; Semchinova, O; Graul, J
卷第15卷
期第1期
印刷ISSN0268-1242
电子ISSN1361-6641
文件大小250.67KB
发表时间2000-01-01
DOI10.1088/0268-1242/15/1/313
页码73-78

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Point defects in gamma-irradiated n-GaN