[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - Robust, 1000 V, 130 mΩ-cm/sup 2/, lateral, two-zone RESURF MOSFETs in 6H-SiC
- 作者Banerjee, S.; Chow, T.P.; Gutmann, R.J.
- 文件大小422.11KB
- 发表时间2000
- DOI10.1109/ISPSD.2002.1016173
- 页码69-72
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