[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - 24 mΩcm/sup 2/ 680 V silicon superjunction MOSFET
- 作者Onishi, Y.; Iwamoto, S.; Sato, T.; Nagaoka, T.; Ueno, K.; Fujihira, T.
- 文件大小298.73KB
- 发表时间2000
- DOI10.1109/ISPSD.2002.1016216
- 页码241-244
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