A novel trench clustered insulated gate bipolar transistor (TCIGBT)
- 期刊名称IEEE Electron Device Letters
- 作者Spulber, O.; Sweet, M.; Vershinin, K.; Ngw, C.K.; Ngwendson, L.; Bose, J.V.S.C.; De Souza, M.M.; Sanakara Narayanan, E.M.
- 卷第21卷
- 期第12期
- 印刷ISSN0741-3106
- 电子ISSN1558-0563
- 文件大小157.43KB
- 发表时间2000-12
- DOI10.1109/55.887483
- 页码613-615
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