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Effect of hydrogen dilution on the structure of SiOF films prepared by remote plasma enhanced chemical vapor deposition from SiF[sub 4]-based plasmas

Effect of hydrogen dilution on the structure of SiOF films prepared by remote plasma enhanced chemical vapor deposition from SiF[sub 4]-based plasmas

J. C. Alonso; E. Pichardo; V. Pankov; A. Ortiz
  • 作者J. C. Alonso; E. Pichardo; V. Pankov; A. Ortiz
  • 文件大小616.11KB
  • 发表时间2000
  • DOI10.1116/1.1308593
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