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Observation of Transient Enhanced Diffusion in B+-Implanted Si by Buried Boron Isotopes

Observation of Transient Enhanced Diffusion in B+-Implanted Si by Buried Boron Isotopes

R. Chang; H. Chiang; H. Liu; L. Ho; P. Chiang; J. Tsai; J. Lin
  • 作者R. Chang; H. Chiang; H. Liu; L. Ho; P. Chiang; J. Tsai; J. Lin
  • 文件大小111.09KB
  • 发表时间2000
  • DOI10.1143/JJAP.39.6136
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