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Luminescence measurements on MOS tunnel diodes as a method of finding the photon emission rates in silicon

Luminescence measurements on MOS tunnel diodes as a method of finding the photon emission rates in silicon

N. Asli; S.V. Gastev; I.V. Grekhov; P. Seegebrecht; A.F. Shulekin; S.E. Tyaginov; M.I. Vexler; H. Zimmermann
  • 作者N. Asli; S.V. Gastev; I.V. Grekhov; P. Seegebrecht; A.F. Shulekin; S.E. Tyaginov; M.I. Vexler; H. Zimmermann
  • 卷第3卷
  • 印刷ISSN1369-8001
  • 文件大小142.51KB
  • 发表时间2000
  • DOI10.1016/s1369-8001(00)00081-0
  • 页码539-543
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