Difference in Secondary Defects between High Energy B+ and Al+ implanted 4H-SiC
- 期刊名称MRS Proceedings
- 作者Ohno, Toshiyuki; Kobayashi, Naoto
- 卷第640卷
- 电子ISSN1946-4274
- 文件大小324.84KB
- 发表时间2000-1
- DOI10.1557/proc-640-h2.29
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