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Wave-mechanical study of gate tunneling leakage reduction in ultra-thin (<2 nm) dielectric MOS and H-MOS devices

Wave-mechanical study of gate tunneling leakage reduction in ultra-thin (<2 nm) dielectric MOS and H-MOS devices

E. Cassan; P. Dollfus; S. Galdin

作者E. Cassan; P. Dollfus; S. Galdin
卷第280卷
印刷ISSN0022-3093
文件大小247.79KB
发表时间2001
DOI10.1016/s0022-3093(00)00355-0

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