Inclusive Education
- 期刊名称International Journal of Disability, Development and Education
- 作者Lim, Levan; Ireland, Rebecca
- 卷第48卷
- 期第3期
- 印刷ISSN1034-912X
- 电子ISSN1465-346X
- 文件大小87.46KB
- 发表时间2001-09
- DOI10.1080/10349120120073449
- 页码313-316
[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Perspectives in microscopic carrier transportAndo, T. · 2002
[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Simulation of substrate currentsSchoenmaker, W.; Meuris, P.; Magnus, W.; Maleszka, B. · 2002
[Japan Soc. Appl. Phys Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International Microprocesses and Nanotechnology Conference - Tokyo, Japan (6-8 Nov. 2002)] 2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. - Exposure tool effects on OPCDetje, M.; Hassmann, J.; Kurth, K. · 2002
[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Technology modeling for emerging SOI devicesIeong, M.; Oldiges, P. · 2002
[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2-4 Sept. 1996)] 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) - Improved separators by multigrid methodsGartner, K.; Fichtner, W. · 1996
[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Enhanced advancing front Delaunay meshing in TCADFleischmann, P.; Selberherr, S. · 2002
[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2-4 Sept. 1996)] 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) - The application of TCAD in industryMar, J. · 1996
[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Coupled-field modeling of microdevices and microsystemsWachutka, G. · 2002