In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells
- 期刊名称Journal of Applied Physics
- 作者Ghezzi, C.; Cioce, B.; Magnanini, R.; Parisini, A.
- 卷第90卷
- 期第10期
- 印刷ISSN0021-8979
- 文件大小367.08KB
- 发表时间2001
- DOI10.1063/1.1407310
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