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[IEEE International Electron Devices Meeting. Technical Digest - Washington, DC, USA (2-5 Dec. 2001)] International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) - Weibull slopes, critical defect density, and the validity of stress-induced-leakage current (SILC) measurements

[IEEE International Electron Devices Meeting. Technical Digest - Washington, DC, USA (2-5 Dec. 2001)] International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) - Weibull slopes, critical defect density, and the validity of stress-induced-leakage current (SILC) measurements

Wu, E.Y.; Sune, J.; Nowak, E.; Lai, W.; McKenna, J.

作者Wu, E.Y.; Sune, J.; Nowak, E.; Lai, W.; McKenna, J.
文件大小405.09KB
发表时间2001
DOI10.1109/iedm.2001.979448

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