Low-k silicon nitride film for copper interconnects process prepared by catalytic chemical vapor deposition method at low temperature
- 作者Hidekazu Sato; Akira Izumi; Atsushi Masuda; Hideki Matsumura
- 卷第395卷
- 印刷ISSN0040-6090
- 文件大小471.93KB
- 发表时间2001
- DOI10.1016/s0040-6090(01)01284-6
- 页码280-283
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